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SIR872DP-T1-GE3
| Manufacturer | Vishay |
| Packaging | Tape&Reel |
| Package Type | PowerPAK® SO-8 |
| RoHS Status | |
| Description | N-Channel 150 V (D-S) MOSFET |
| Datasheet |
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Specification
| Manufacturer | Vishay |
|---|---|
| MPQ | 3000 |
| Packing | Tape&Reel |
| Package Type | PowerPAK® SO-8 |
| Product Category | RF FETs |
| Lead Free/RoHS Status | |
| Description | N-Channel 150 V (D-S) MOSFET |
| Attribute | Value |
|---|---|
| Package / Case | SOIC-8 |
| 商品目录 | MOSFET |
| 漏源极电压Vds | 150V |
| 栅极电压Vgs | ±20V |
| Width | 5.15mm |
| 不同Vds时的输入电容（Ciss）（最大值） | 2130pF @ 75V |
| 不同Vgs时的栅极电荷 （Qg）（最大值） | 64nC @ 10V |
| 工作温度 | -55°C~150°C(TJ) |
| 不同Id时的Vgs（th）（最大值） | 3.5V @ 250µA |
| Series | SIR |
| FET类型 | N-Channel |
| Rds On(Max）@Id,Vgs | 18m Ohms |
| 连续漏极电流Id | 53.7A |
| Height | 1.04mm |
| Power Dissipation (Max) | 6.25W(Ta),104W(Tc) |
| 驱动电压@Rds On（Max),Rds On(Min） | 10V |
| Length | 6.15mm |
In Stock：0
Minimum : 3000 Multiples : 3000
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