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SIHG22N60E-GE3
| Manufacturer | Vishay |
| Packaging | Tube |
| Package Type | TO-247-3 |
| RoHS Status | |
| Description | E Series Power MOSFET |
| Datasheet |
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Specification
| Manufacturer | Vishay |
|---|---|
| MPQ | 25 |
| Packing | Tube |
| Package Type | TO-247-3 |
| Product Category | Linear Transistor Drivers |
| Lead Free/RoHS Status | |
| Description | E Series Power MOSFET |
| Attribute | Value |
|---|---|
| Package / Case | TO-247-3 |
| 商品目录 | MOSFET |
| 漏源极电压Vds | 4V |
| Input Capacitance (Ciss) @ Vds | 1920pF @ 100V |
| 栅极电压Vgs | ±30V |
| 不同Vds时的输入电容（Ciss）（最大值） | 1920pF @ 100V |
| 不同Vgs时的栅极电荷 （Qg）（最大值） | 86nC @ 10V |
| 不同Id时的Vgs（th）（最大值） | 4V @ 250µA |
| FET类型 | N-Channel |
| Power Dissipation (Max) | 227W(Tc) |
| Power - Max | 227W |
| Supplier Device Package | TO-247AC |
| 工作温度 | -55°C~150°C(TJ) |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 600V |
| Packaging | Tube |
| Rds On (Max) @ Id, Vgs | 180 mOhm @ 11A, 10V |
| Series | SI |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Weight | 6.04克(g) |
| Gate Charge (Qg) @ Vgs | 86nC @ 10V |
| Rds On(Max）@Id,Vgs | 180m Ohms |
| 连续漏极电流Id | 21A |
| Mounting Type | Through Hole |
| 驱动电压@Rds On（Max),Rds On(Min） | 10V |
In Stock：0
Minimum : 500 Multiples : 25
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